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PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性
(Electrical properties of IGZO-TFT with Al2O3 gate insulators by PE-ALD method)
応用物理学会春季学術講演会. March 17, 2014-March 20, 2014.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:24:04 +0900 Updated at: 2017-07-10 21:47:56 +0900