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シリコンカーバイドの熱酸化に関する理論的研究：SiO2/SiC界面の化学種について
( A theoretical study on the thermal oxidation of silicon carbide: Chemical species at the SiO2/SiC interface)
American Physical Society March Meeting. 2016.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:23:16 +0900Updated at: 2017-07-10 22:18:48 +0900