HOME > Presentation > DetailEpitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor FormationSAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, FUKATA, Naoki. 239th ECS Meeting/ https://www.electrochem.org/239. 2021.NIMS author(s)SAPUTRO, Rahmat HadiMATSUMURA, RyoFUKATA, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-06-11 03:00:18 +0900Updated at: 2021-06-11 03:00:18 +0900