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Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Formation

Author(s)サプトロ ラハマト ハディ, MATSUMURA, Ryo, FUKATA, Naoki.
Event name239th ECS Meeting/ https://www.electrochem.org/239
Year of publication2021
LanguageEnglish

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