HOME > Presentation > Detail
4H-SiC(0001)/SiO2 界面欠陥準位の第一原理解析：欠陥構造の重要性
(First-principles analysis on defect levels of 4H-SiC(0001)/SiO2 interface: Importance of defect structures)
先進パワー半導体分科会 第2回講演会. 2015.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:11:04 +0900Updated at: 2017-07-10 22:19:11 +0900