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High-Mobility Normally-Off Hydrogen-Terminated Diamond Field-Effect Transistors with a h-BN Gate Insulator

14th International Conference on New Diamond and Nano Carbons 2020/2021 / https://www.ndnc2020.org/index.html. 2021.

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    作成時刻: 2021-08-07 03:00:21 +0900更新時刻: 2021-08-07 03:00:21 +0900

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