HOME > Published patent applications > Detail[Published patent application] ガリウム窒化物半導体基板の製造方法、ガリウム窒化物半導体装置の製造方法および撮像素子の製造方法2019-01-24. 2019012826 (Google Patents) NIMS author(s)KIMOTO, KojiMITSUISHI, KazutakaIROKAWA, YoshihiroNABATAME, ToshihideCreated at :2023-07-22 21:46:01 +0900 Updated at :2023-07-22 21:46:01 +0900