Characterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current technique | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Characterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current technique

SEKIGUCHI, Takashi, Yuan, Xiaoli, KOIZUMI, Satoshi, TANIGUCHI, Takashi.

/books?q=book_title_text%3A%22%22 139-152. 2008.

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作成時刻: 2022-09-05 12:03:59 +0900更新時刻: 2022-09-05 12:03:59 +0900

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