HOME > Books > DetailCharacterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current techniqueSEKIGUCHI, Takashi, Yuan, Xiaoli, KOIZUMI, Satoshi, TANIGUCHI, Takashi. /books?q=book_title_text%3A%22%22 139-152. 2008.NIMS author(s)KOIZUMI, SatoshiTANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-09-05 12:03:59 +0900Updated at: 2022-09-05 12:03:59 +0900