| 302件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Masataka Kano, Takeo Minari, Kazuhito Tsukagoshi. All-Solution-Processed Selective Assembly of Flexible Organic Field-Effect Transistor Arrays. Applied Physics Express. 3 [5] (2010) 051601 10.1143/apex.3.051601 | |
| Shang Gao, Ashraful Islam, Youhei Numata, Liyuan Han. A β-Diketonato Ruthenium(II) Complex with High Molar Extinction Coefficient for Panchromatic Sensitization of Nanocrystalline TiO2Film. Applied Physics Express. 3 [6] (2010) 062301 10.1143/apex.3.062301 | |
| Yusuke Shuto, Ryosho Nakane, Wenhong Wang, Hiroaki Sukegawa, Shuu'ichirou Yamamoto, Masaaki Tanaka, Koichiro Inomata, Satoshi Sugahara. A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET. Applied Physics Express. 3 [1] (2010) 013003 10.1143/apex.3.013003 | |
| Takaaki Mano, Marco Abbarchi, Takashi Kuroda, Brian McSkimming, Akihiro Ohtake, Kazutaka Mitsuishi, Kazuaki Sakoda. Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting. Applied Physics Express. 3 [6] (2010) 065203 10.1143/apex.3.065203 Open Access | |
| Hidefumi Takami, Teruo Kanki, Shigenori Ueda, Keisuke Kobayashi, Hidekazu Tanaka. Electronic Structure of W-Doped VO2Thin Films with Giant Metal–Insulator Transition Investigated by Hard X-ray Core-Level Photoemission Spectroscopy. Applied Physics Express. 3 [6] (2010) 063201 10.1143/apex.3.063201 | |
| Igor Píš, Masaaki Kobata, Tomohiro Matsushita, Hiroshi Nohira, Keisuke Kobayashi. Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO2Layer. Applied Physics Express. 3 [5] (2010) 056701 10.1143/apex.3.056701 | |
| Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda, Akihiro Ohtake. Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures. Applied Physics Express. 3 [3] (2010) 035701 10.1143/apex.3.035701 | |
| Takashi Tsuchiya, Yukiko Oyama, Shogo Miyoshi, Shu Yamaguchi. Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor. Applied Physics Express. 2 (2009) 055002 10.1143/apex.2.055002 | |
| Norio Tokuda, Hitoshi Umezawa, Hiromitsu Kato, Masahiko Ogura, Satoshi Gonda, Kikuo Yamabe, Hideyo Okushi, Satoshi Yamasaki. Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface. Applied Physics Express. 2 (2009) 055001 10.1143/apex.2.055001 | |
| Hisashi Matsumura, Yasuo Kanematsu, Takayoshi Shimura, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Masatomo Sumiya, Takayuki Nakano, Shunro Fuke. Lateral Polarity Control in GaN Based on Selective Growth Procedure. Applied Physics Express. 2 [10] (2009) 101001 10.1143/apex.2.101001 | |
