HOME > 論文 > 書誌詳細A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFETYusuke Shuto, Ryosho Nakane, Wenhong Wang, Hiroaki Sukegawa, Shuu'ichirou Yamamoto, Masaaki Tanaka, Koichiro Inomata, Satoshi Sugahara. Applied Physics Express 3 [1] 013003. 2010.https://doi.org/10.1143/apex.3.013003 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:06:27 +0900更新時刻: 2024-04-02 06:02:23 +0900
