A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

Yusuke Shuto, Ryosho Nakane, Wenhong Wang, Hiroaki Sukegawa, Shuu'ichirou Yamamoto, Masaaki Tanaka, Koichiro Inomata, Satoshi Sugahara.

Applied Physics Express 3 [1] 013003. 2010.

https://doi.org/10.1143/apex.3.013003

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作成時刻: 2016-05-24 16:06:27 +0900 更新時刻: 2026-05-03 07:32:23 +0900

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