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A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

Yusuke Shuto, Ryosho Nakane, Wenhong Wang, Hiroaki Sukegawa, Shuu'ichirou Yamamoto, Masaaki Tanaka, Koichiro Inomata, Satoshi Sugahara.
Applied Physics Express 3 [1] 013003. 2010.

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