A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET | SAMURAI, NIMS Researchers Directory Service

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A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET

Yusuke Shuto, Ryosho Nakane, Wenhong Wang, Hiroaki Sukegawa, Shuu'ichirou Yamamoto, Masaaki Tanaka, Koichiro Inomata, Satoshi Sugahara.

Applied Physics Express 3 [1] 013003. 2010.

https://doi.org/10.1143/apex.3.013003

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 16:06:27 +0900 Updated at: 2026-10-08 07:39:07 +0900

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