Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO<sub>2</sub>Layer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO₂Layer
(Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO2Layer)

Igor Píš, Masaaki Kobata, Tomohiro Matsushita, Hiroshi Nohira, Keisuke Kobayashi.

Applied Physics Express 3 [5] 056701. 2010.

https://doi.org/10.1143/apex.3.056701

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作成時刻: 2016-05-24 16:03:58 +0900 更新時刻: 2026-10-30 08:56:32 +0900

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