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Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO2Layer
(Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO2Layer)

Igor Píš, Masaaki Kobata, Tomohiro Matsushita, Hiroshi Nohira, Keisuke Kobayashi.
Applied Physics Express 3 [5] 056701. 2010.

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      作成時刻: 2016-05-24 16:03:58 +0900更新時刻: 2024-03-31 18:06:12 +0900

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