Effect of Interface Oxidation on the Electrical Characteristics of HfO<sub>2</sub>/Ultrathin-Epitaxial-Ge/GaAs(100) Structures | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
(Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures)

Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda, Akihiro Ohtake.

Applied Physics Express 3 [3] 035701. 2010.

https://doi.org/10.1143/apex.3.035701

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作成時刻: 2016-05-24 16:01:13 +0900更新時刻: 2024-03-31 18:00:31 +0900

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