Effect of Interface Oxidation on the Electrical Characteristics of HfO<sub>2</sub>/Ultrathin-Epitaxial-Ge/GaAs(100) Structures | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Effect of Interface Oxidation on the Electrical Characteristics of HfO₂/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
(Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures)

Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda, Akihiro Ohtake.

Applied Physics Express 3 [3] 035701. 2010.

https://doi.org/10.1143/apex.3.035701

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:01:13 +0900 更新時刻: 2026-03-23 08:44:50 +0900

▲ページトップへ移動