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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2026年11月09日

9332件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Igor Bykov, Marina Makarova, Vladimir Trepakov, Alexandr Dejneka, Lesya Yurchenko, Lesya Yurchenko, Aleš Jäger, Lubomir Jastrabik. Intrinsic and impurity defects in chromium-doped SrTiO3 nanopowders: EPR and NMR study. physica status solidi (b). 250 [4] (2013) 821-824 10.1002/pssb.201200871
  • J. H. Lim, B. N. Kim, Y. Kim, S. Kang, R. J. Xie, I. S. Chong, K. Morita, H. Yoshida, K. Hiraga. Non-rare earth white emission phosphor: Ti-doped MgAl2O4. Applied Physics Letters. 102 [3] (2013) 031104 10.1063/1.4788929
  • Baodan Liu, Yoshio Bando, Lizhao Liu, Jijun Zhao, Mitome Masanori, Xin Jiang, Dmitri Golberg. Solid–Solution Semiconductor Nanowires in Pseudobinary Systems. Nano Letters. 13 [1] (2013) 85-90 10.1021/nl303501t
  • Somobrata Acharya, Bidisa Das, Umamahesh Thupakula, Katsuhiko Ariga, D. D. Sarma, Jacob Israelachvili, Yuval Golan. A Bottom-Up Approach toward Fabrication of Ultrathin PbS Sheets. Nano Letters. 13 [2] (2013) 409-415 10.1021/nl303568d
  • Masashi Ishii, Brian Towlson, Susumu Harako, Xin-wei Zhao, Shuji Komuro, Bruce Hamilton. Charge Propagation Dynamics in Temperature Quenching of Sm-Doped TiO2: Impedance Spectroscopy of Release Processes of Trapped Charges Determining Luminescence Intensity. Japanese Journal of Applied Physics. 52 [2R] (2013) 025601 10.7567/jjap.52.025601
  • S. Boseggia, R. Springell, H. C. Walker, H. M. Rønnow, Ch. Rüegg, H. Okabe, M. Isobe, R. S. Perry, S. P. Collins, D. F. McMorrow. Robustness of Basal-Plane Antiferromagnetic Order and theJeff=1/2State in Single-Layer Iridate Spin-Orbit Mott Insulators. Physical Review Letters. 110 [11] (2013) 117207 10.1103/physrevlett.110.117207
  • Takashi Takeda, Rong-Jun Xie, Naoto Hirosaki. Local Structure Analysis in Nitride and Oxynitride Phosphors. ECS Journal of Solid State Science and Technology. 2 [2] (2013) R3132-R3137 10.1149/2.018302jss
  • O. Peña-Rodríguez, J. Olivares, E.G. Víllora, K. Shimamura, F. Agulló-López. Ionoluminescence induced by 3MeV He+ ions on as-grown and pre-damaged BaMgF4 crystals. Journal of Luminescence. 136 (2013) 182-185 10.1016/j.jlumin.2012.11.002
  • Yoshihiro Irokawa. Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors. Journal of Applied Physics. 113 [2] (2013) 026104 10.1063/1.4775410
  • H. Jin, H. Shinotsuka, H. Yoshikawa, H. Iwai, M. Arai, S. Tanuma, S. Tougaard. Evaluation of robustness to surface conditions of the target factor analysis method for determining the dielectric function from reflection electron energy loss spectra: Application to GaAs. Surface and Interface Analysis. 45 [6] (2013) 985-992 10.1002/sia.5196
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