HOME > 論文 > 書誌詳細Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensorsYoshihiro Irokawa. Journal of Applied Physics 113 [2] 026104. 2013.https://doi.org/10.1063/1.4775410 NIMS著者色川 芳宏Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 16:54:01 +0900 更新時刻: 2026-09-29 07:11:28 +0900
