Charge transport and thermopower in the electron-doped narrow gap semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ca</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>La</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Pd</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Charge transport and thermopower in the electron-doped narrow gap semiconductor Ca1−xLaxPd3O4

Kouta Kazama, Masato Sakano, Kohei Yamagami, Takuo Ohkochi, Kyoko Ishizaka, Terumasa Tadano, Yusuke Kozuka, Hidetoshi Yoshizawa, Yoshihiro Tsujimoto, Kazunari Yamaura, Jun Fujioka.

Physical Review Materials 7 [8] 085402. 2023.

https://doi.org/10.1103/physrevmaterials.7.085402

Open Access American Physical Society (APS) (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Charge transport and thermopower in the electron-doped narrow gap semiconductor Ca1−xLaxPd3O4

作成時刻: 2023-08-23 03:27:59 +0900更新時刻: 2024-04-02 07:18:00 +0900

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