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Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors

著者Amir Zulkefli, Bablu Mukherjee, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Yutaka Wakayama.
掲載誌名Japanese Journal of Applied Physics 60 [SB] SBBH01
ISSN: 13474065, 00214922
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2021
言語English
DOIhttps://doi.org/10.35848/1347-4065/abd2a0
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