Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Hajime Kiyono.

Journal of Vacuum Science & Technology A 38 [3] 032409. 2020.

https://doi.org/10.1116/6.0000078

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作成時刻: 2020-04-15 03:00:18 +0900更新時刻: 2024-10-06 05:25:07 +0900

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