HOME > 論文 > 書誌詳細First-Principles Studies of the Intrinsic Effect of Nitrogen Atoms on Reduction in Gate Leakage Current through Hf-based High-k DielectricsN. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado. Applied Physics Letters 86 [14] 143507. 2005.https://doi.org/10.1063/1.1899232 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:43:00 +0900更新時刻: 2024-04-01 21:01:05 +0900