First-Principles Studies of the Intrinsic Effect of Nitrogen Atoms on Reduction in Gate Leakage Current through Hf-based High-k Dielectrics | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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First-Principles Studies of the Intrinsic Effect of Nitrogen Atoms on Reduction in Gate Leakage Current through Hf-based High-k Dielectrics

N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado.

Applied Physics Letters 86 [14] 143507. 2005.

https://doi.org/10.1063/1.1899232

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作成時刻: 2016-05-24 14:43:00 +0900 更新時刻: 2026-10-01 05:44:10 +0900

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