HOME > Article > DetailFirst-Principles Studies of the Intrinsic Effect of Nitrogen Atoms on Reduction in Gate Leakage Current through Hf-based High-k DielectricsN. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado. Applied Physics Letters 86 [14] 143507. 2005.https://doi.org/10.1063/1.1899232 NIMS author(s)CHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 14:43:00 +0900Updated at: 2024-04-01 21:01:05 +0900