Yosuke Sasama; Taisuke Kageura; Masataka Imura; Kenji Watanabe; Takashi Taniguchi; Takashi Uchihashi; Yamaguchi Takahide

doi:10.1038/s41928-021-00689-4

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

著者	Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide.
掲載誌名	Nature Electronics 5 [1] 37-44 ISSN: 25201131
出版社	Springer Science and Business Media LLC
発表年	2022
言語	English
DOI	https://doi.org/10.1038/s41928-021-00689-4
この文献をMendeleyにインポート