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High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

Nature Electronics 5 [1] 37-44. 2022.

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    作成時刻: 2022-02-11 03:10:01 +0900更新時刻: 2024-06-02 08:11:58 +0900

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