HOME > 論文 > 書誌詳細High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructuresYosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. Nature Electronics 5 [1] 37-44. 2022.https://doi.org/10.1038/s41928-021-00689-4 NIMS著者笹間 陽介井村 将隆渡邊 賢司谷口 尚内橋 隆山口 尚秀Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-02-11 03:10:01 +0900更新時刻: 2024-03-31 16:23:23 +0900
