HOME > Article > DetailInvestigation of Deep States in GaN Metal-Oxide-Semiconductor InterfacesYoshihiro Irokawa, Mamoru Usami, Jun Uzuhashi, Tadakatsu Ohkubo, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology 15 [5] 055002. 2026.https://doi.org/10.1149/2162-8777/ae6689 Open Access The Electrochemical Society (Publisher) Materials Data Repository (MDR) NIMS author(s)IROKAWA, YoshihiroUZUHASHI, JunOHKUBO, TadakatsuNABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces Created at: 2026-05-14 03:05:39 +0900 Updated at: 2026-10-19 04:32:07 +0900
