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Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by EBIC
(EBIC法によるHfSiON MOSFETのリーク箇所の観察)

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada.
Applied Physics Letters 89 [22] 222104. 2006.
https://doi.org/10.1063/1.2392988

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