HOME > 論文 > 書誌詳細Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit(Gate-Tunable Graphene–WSe2 Heterojunctions at the Schottky–Mott Limit)Samuel W. LaGasse, Prathamesh Dhakras, Kenji Watanabe, Takashi Taniguchi, Ji Ung Lee. Advanced Materials 31 [24] 1901392. 2019.https://doi.org/10.1002/adma.201901392 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻 :2019-08-08 03:11:55 +0900 更新時刻 :2020-11-16 22:14:31 +0900