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Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit
(Gate-Tunable Graphene–WSe2 Heterojunctions at the Schottky–Mott Limit)

Samuel W. LaGasse, Prathamesh Dhakras, Kenji Watanabe, Takashi Taniguchi, Ji Ung Lee.
Advanced Materials 31 [24] 1901392. 2019.
https://doi.org/10.1002/adma.201901392

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