HOME > 論文 > 書誌詳細Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FETSangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema Movva, Kyounghwan Kim, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee. IEEE Electron Device Letters 36 [4] 405-407. 2015.https://doi.org/10.1109/led.2015.2398737 NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:45:08 +0900更新時刻: 2025-03-15 05:47:55 +0900
