Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

Sangwoo Kang; Babak Fallahazad; Kayoung Lee; Hema Movva; Kyounghwan Kim; Chris M. Corbet; Takashi Taniguchi; Kenji Watanabe; Luigi Colombo; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1109/led.2015.2398737

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Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema Movva, Kyounghwan Kim, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee.

IEEE Electron Device Letters 36 [4] 405-407. 2015.

https://doi.org/10.1109/led.2015.2398737

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作成時刻: 2016-05-24 17:45:08 +0900更新時刻: 2024-04-01 23:14:29 +0900