Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

Sangwoo Kang; Babak Fallahazad; Kayoung Lee; Hema Movva; Kyounghwan Kim; Chris M. Corbet; Takashi Taniguchi; Kenji Watanabe; Luigi Colombo; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee; Sangwoo Kang; Babak Fallahazad; Kayoung Lee; Hema Movva; Kyounghwan Kim; Chris M. Corbet; Takashi Taniguchi; Kenji Watanabe; Luigi Colombo; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1109/led.2015.2398737

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema Movva, Kyounghwan Kim, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee.

IEEE Electron Device Letters 36 [4] 405-407. 2015.

https://doi.org/10.1109/led.2015.2398737

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:45:08 +0900Updated at: 2024-05-02 09:56:40 +0900