Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer
(Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström-Thin Passivation Layer)

Yunjo Jeong, Ossie Douglas, Utkarsh Misra, Md Rubayat‐E Tanjil, Kenji Watanabe, Takashi Taniguchi, Michael Cai Wang.

Advanced Electronic Materials 7 [6] 2100002. 2021.

https://doi.org/10.1002/aelm.202100002

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-10-08 03:33:36 +0900 更新時刻: 2026-10-30 06:59:34 +0900

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