Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer | SAMURAI, NIMS Researchers Directory Service

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Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer
(Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström-Thin Passivation Layer)

Yunjo Jeong, Ossie Douglas, Utkarsh Misra, Md Rubayat‐E Tanjil, Kenji Watanabe, Takashi Taniguchi, Michael Cai Wang.

Advanced Electronic Materials 7 [6] 2100002. 2021.

https://doi.org/10.1002/aelm.202100002

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-10-08 03:33:36 +0900Updated at: 2024-03-31 13:33:17 +0900

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