HOME > 論文 > 書誌詳細Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealingErika Maeda, Toshihide Nabatame, Kazuya Yuge, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Koji Shiozaki, Hajime Kiyono. Microelectronic Engineering 216 111036. 2019.https://doi.org/10.1016/j.mee.2019.111036 NIMS著者生田目 俊秀大井 暁彦池田 直樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-07-13 03:00:18 +0900更新時刻: 2024-04-02 00:53:08 +0900
