HOME > 論文 > 書誌詳細Appearance of n-Type Semiconducting Properties of cBN Single Crystals Grown at High Pressure(立方晶窒化ホウ素単結晶のn型半導体特性)Takashi Taniguchi, Tokuyuki Teraji, Satoshi Koizumi, Kenji Watanabe, Shinobu Yamaoka. Japanese Journal of Applied Physics 41 [Part 2, No. 2A] L109-L111. 2002.https://doi.org/10.1143/jjap.41.l109 NIMS著者小泉 聡渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 11:46:44 +0900更新時刻: 2024-04-02 06:09:17 +0900
