HOME > Article > DetailAppearance of n-Type Semiconducting Properties of cBN Single Crystals Grown at High Pressure(立方晶窒化ホウ素単結晶のn型半導体特性)Takashi Taniguchi, Tokuyuki Teraji, Satoshi Koizumi, Kenji Watanabe, Shinobu Yamaoka. Japanese Journal of Applied Physics 41 [Part 2, No. 2A] L109-L111. 2002.https://doi.org/10.1143/jjap.41.l109 NIMS author(s)KOIZUMI, SatoshiWATANABE, KenjiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 11:46:44 +0900 Updated at: 2026-05-03 07:38:25 +0900