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Characterization of a 4-inch GaN wafer by X-ray diffraction topography

CrystEngComm 20 [48] 7761-7765. 2018.
Open Access Royal Society of Chemistry (RSC) (Publisher)

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2019-03-01 11:45:26 +0900更新時刻: 2024-10-06 05:16:49 +0900

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