HOME > 論文 > 書誌詳細Characterization of a 4-inch GaN wafer by X-ray diffraction topographyJaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata. CrystEngComm 20 [48] 7761-7765. 2018.https://doi.org/10.1039/c8ce01440j NIMS著者色川 芳宏生田目 俊秀Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:45:26 +0900 更新時刻: 2026-09-29 05:11:15 +0900
