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Characterization of a 4-inch GaN wafer by X-ray diffraction topography

著者Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata.
掲載誌名CrystEngComm 20 [48] 7761-7765
ISSN: 14668033
ESIでのカテゴリ: CHEMISTRY
出版社Royal Society of Chemistry (RSC)
発表年2018
言語English
DOIhttps://doi.org/10.1039/c8ce01440j
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