Improved leakage current properties of ZrO 2 /(Ta/Nb)O x -Al 2 O 3 /ZrO 2 nanolaminate insulating stacks for dynamic random access memory capacitors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Improved leakage current properties of ZrO 2 /(Ta/Nb)O x -Al 2 O 3 /ZrO 2 nanolaminate insulating stacks for dynamic random access memory capacitors
(Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory)

Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura.

Thin Solid Films 655 48-53. 2018.

https://doi.org/10.1016/j.tsf.2018.02.010

Open Access Elsevier BV (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2018-04-19 20:41:49 +0900更新時刻: 2024-03-30 02:51:15 +0900

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