HOME > 論文 > 書誌詳細Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamondTERAJI, Tokuyuki, KOIZUMI, Satoshi, KOIDE, Yasuo, ITOToshimichi. APPLIED SURFACE SCIENCE 6273-6276. 2008.NIMS著者寺地 徳之小泉 聡小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-10-21 22:33:24 +0900更新時刻: 2022-10-21 22:33:24 +0900
