HOME > Article > DetailElectric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamondTERAJI, Tokuyuki, KOIZUMI, Satoshi, KOIDE, Yasuo, ITOToshimichi. APPLIED SURFACE SCIENCE 6273-6276. 2008.NIMS author(s)TERAJI, TokuyukiKOIZUMI, SatoshiKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-10-21 22:33:24 +0900Updated at: 2022-10-21 22:33:24 +0900