HOME > 論文 > 書誌詳細High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser AnnealingRahmat Hadi Saputro, Tatsuro Maeda, Kaoru Toko, Ryo Matsumura, Naoki Fukata. ACS Applied Electronic Materials 6 [6] 4297-4303. 2024.https://doi.org/10.1021/acsaelm.4c00399 Open Access American Chemical Society (ACS) (Publisher) Materials Data Repository (MDR) NIMS著者松村 亮深田 直樹Materials Data Repository (MDR)上の本文・データセットMDRavailable High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing 作成時刻: 2024-09-25 03:09:05 +0900 更新時刻: 2026-07-17 04:31:52 +0900
