Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, or Hf<sub>0.57</sub>Si<sub>0.43</sub>O<sub>x</sub> Gate Dielectrics | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics

Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide.

ECS Journal of Solid State Science and Technology 11 [8] 085010. 2022.

https://doi.org/10.1149/2162-8777/ac8a70

Open Access The Electrochemical Society (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-08-30 03:27:25 +0900更新時刻: 2024-03-31 16:53:28 +0900

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