Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, or Hf<sub>0.57</sub>Si<sub>0.43</sub>O<sub>x</sub> Gate Dielectrics | SAMURAI, NIMS Researchers Directory Service

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Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al₂O₃, HfO₂, or Hf_0.57Si_0.43O_x Gate Dielectrics

Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide.

ECS Journal of Solid State Science and Technology 11 [8] 085010. 2022.

https://doi.org/10.1149/2162-8777/ac8a70

Open Access The Electrochemical Society (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-08-30 03:27:25 +0900 Updated at: 2025-04-12 08:49:07 +0900

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