HOME > 論文 > 書誌詳細2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 SourceJunyang He, Nan Fang, Keigo Nakamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Advanced Electronic Materials 4 [7] 1800207. 2018.https://doi.org/10.1002/aelm.201800207 NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2018-08-22 15:06:52 +0900更新時刻: 2024-03-29 23:34:10 +0900
