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2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 Source

Author(s)Junyang He, Nan Fang, Keigo Nakamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio.
Journal titleAdvanced Electronic Materials 4 [7] 1800207
ISSN: 2199160X
ESI category: MATERIALS SCIENCE
PublisherWiley
Year of publication2018
LanguageEnglish
DOIhttps://doi.org/10.1002/aelm.201800207
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