Junyang He; Nan Fang; Keigo Nakamura; Keiji Ueno; Takashi Taniguchi; Kenji Watanabe; Kosuke Nagashio

doi:10.1002/aelm.201800207

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 Source

著者	Junyang He, Nan Fang, Keigo Nakamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio.
掲載誌名	Advanced Electronic Materials 4 [7] 1800207 ISSN: 2199160X ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Wiley
発表年	2018
言語	English
DOI	https://doi.org/10.1002/aelm.201800207
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