HOME > 論文 > 書誌詳細71Ga NMR characterization of an n-doped free-standing gallium nitride waferAtsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide. Japanese Journal of Applied Physics 58 [3] 031003. 2019.https://doi.org/10.7567/1347-4065/aafd1a NIMS著者後藤 敦色川 芳宏生田目 俊秀丹所 正孝端 健二郎大木 忍清水 禎小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:44:35 +0900更新時刻: 2024-10-06 04:45:51 +0900
