HOME > 論文 > 書誌詳細Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputteringKota Tatejima, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow. Japanese Journal of Applied Physics 58 [SB] SBBK03. 2019.https://doi.org/10.7567/1347-4065/aafd8e NIMS著者立島 滉大長田 貴弘知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-08-24 03:00:16 +0900更新時刻: 2024-04-02 01:50:17 +0900