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Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering

Kota Tatejima, Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow.

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    Created at: 2019-08-24 03:00:16 +0900Updated at: 2024-04-02 01:50:17 +0900

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