HOME > 論文 > 書誌詳細Single-Gate MoS2 Tunnel FET with a Thickness-Modulated HomojunctionTomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. ACS Applied Materials & Interfaces 16 [7] 8993-9001. 2024.https://doi.org/10.1021/acsami.3c15535 NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2024-02-27 03:10:45 +0900更新時刻: 2024-04-02 07:33:23 +0900
