HOME > Article > DetailSingle-Gate MoS2 Tunnel FET with a Thickness-Modulated HomojunctionTomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. ACS Applied Materials & Interfaces 16 [7] 8993-9001. 2024.https://doi.org/10.1021/acsami.3c15535 NIMS author(s)TANIGUCHI, TakashiWATANABE, KenjiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2024-02-27 03:10:45 +0900 Updated at: 2026-10-08 09:02:04 +0900
