HOME > Article > DetailDemonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure(AlN/ダイヤモンドヘテロ構造を用いたダイヤモンド電界効果トランジスタ)Masataka Imura, Ryoma Hayakawa, Eiichiro Watanabe, Meiyong Liao, Yasuo Koide, Hiroshi Amano. physica status solidi (RRL) - Rapid Research Letters 5 [3] 125-127. 2011.https://doi.org/10.1002/pssr.201105024 NIMS author(s)IMURA, MasatakaHAYAKAWA, RyomaWATANABE, EiichiroLIAO, MeiyongKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 16:19:47 +0900Updated at: 2025-02-11 05:38:21 +0900