Fluorinated Graphene Contacts and Passivation Layer for MoS
            <sub>2</sub>
            Field Effect Transistors

Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors

著者	Huije Ryu, Dong‐Hyun Kim, Junyoung Kwon, Sang Kyu Park, Wanggon Lee, Hyungtak Seo, Kenji Watanabe, Takashi Taniguchi, SunPhil Kim, Arend M. van der Zande, Jangyup Son, Gwan‐Hyoung Lee.
掲載誌名	Advanced Electronic Materials 8 [10] 2101370 ISSN: 2199160X ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Wiley
発表年	2022
言語	English
DOI	https://doi.org/10.1002/aelm.202101370
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