Fluorinated Graphene Contacts and Passivation Layer for MoS
            <sub>2</sub>
            Field Effect Transistors

Huije Ryu; Dong‐Hyun Kim; Junyoung Kwon; Sang Kyu Park; Wanggon Lee; Hyungtak Seo; Kenji Watanabe; Takashi Taniguchi; SunPhil Kim; Arend M. van der Zande; Jangyup Son; Gwan‐Hyoung Lee; Huije Ryu; Dong‐Hyun Kim; Junyoung Kwon; Sang Kyu Park; Wanggon Lee; Hyungtak Seo; Kenji Watanabe; Takashi Taniguchi; SunPhil Kim; Arend M. van der Zande; Jangyup Son; Gwan‐Hyoung Lee

doi:10.1002/aelm.202101370

Fluorinated Graphene Contacts and Passivation Layer for MoS ₂ Field Effect Transistors

Huije Ryu, Dong‐Hyun Kim, Junyoung Kwon, Sang Kyu Park, Wanggon Lee, Hyungtak Seo, Kenji Watanabe, Takashi Taniguchi, SunPhil Kim, Arend M. van der Zande, Jangyup Son, Gwan‐Hyoung Lee.

Advanced Electronic Materials 8 [10] 2101370. 2022.

https://doi.org/10.1002/aelm.202101370

Open Access Wiley (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Fluorinated Graphene Contacts and Passivation Layer for MoS <sub>2</sub> Field Effect Transistors

Created at: 2022-11-08 03:39:29 +0900 Updated at: 2026-10-30 08:29:11 +0900

Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Fluorinated Graphene Contacts and Passivation Layer for MoS ₂ Field Effect Transistors